Multi-Layer Thyristor Random Access Memory with Silicon-Germanium Bases

ABSTRACT

A semiconductor structure for a DRAM is described having multiple layers of arrays of thyristor memory cells with silicon-germanium base regions. Memory cells in a vertical string extending through the layers have an electrical connection to one terminal of the memory cells in that string. Word lines couple the strings together. Each layer of the array also includes bit line connections to memory cells on that layer. Select transistors enable the use of folded bit lines. Methods of fabricating the array are described.

CROSS-REFERENCE TO RELATED APPLICATIONS

This patent application is a continuation-in-part of U.S. patentapplication Ser. No. 15/957,865, filed Apr. 19, 2018, entitled,“Multi-Layer Random Access Memory and Methods of Manufacture” which isincorporated by reference along with all other references cited in thisapplication.

BACKGROUND OF THE INVENTION

This invention relates to semiconductor devices for information storage.In particular, the invention relates to a multi-layer memory device fora random access memory and to methods of fabrication of such a memory.

Various dynamic random access memory (DRAM) semiconductor cellstructures have been proposed using thyristors. The assignee hereindescribes several thyristor semiconductor structures for DRAMs, and theprocesses for manufacturing them in two as well as three-dimensionarrays in various commonly assigned co-pending patent applications. See,e.g., the provisional patent applications cited above. This applicationdescribes improvements over the technology described in thoseapplications.

The 1-transistor 1-capacitor memory cell has been by far the predominantmemory cell used in DRAM devices for the last 30 years. Bit density hasquadrupled approximately every 3 years by lithographical scaling andever increasing process complexity. Maintaining the capacitance valueand low transistor leakage, however, are significant issues for furtherreductions in cell area.

Recently alternative DRAM cells have been proposed to overcome thescaling challenges of conventional DRAM technology. These includefloating body DRAM (FBDRAM), a single MOSFET built on either asilicon-on-insulator (Okhonin, Int. SOI Conf., 2001) or in triple-wellwith a buried n-implant (Ranica, VLSI Technology, 2004). Thesetechnologies have yet to solve data retention issues, particularly insmall geometry cells.

Various cell designs have been proposed based on the negativedifferential resistance behavior of a thyristor. An active or passivegate is often used in these designs to optimize trade-offs amongswitching speed, retention leakage, and operation voltage. The thincapacitively coupled thyristor disclosed in U.S. Pat. No. 6,462,359 is alateral pnpn thyristor constructed on a silicon on insulator substratewith a coupling gate for increased switching speed.

Liang in U.S. Pat. No. 9,013,918 disclosed a pnpn thyristor cell that isconstructed on a silicon substrate and operated in forward and reversebreakdown region for writing data into the cell. The use of epitaxial orCVD semiconductor layers at the backend of the standard CMOS process,add-on thermal cycles and etch steps, however, degrade performance andyield of devices already formed on, or in, the substrate. In addition,pnpn devices operated in the breakdown regime pose challenges in processcontrol and power consumption.

Recently, Kim et al. reported electrical characteristics for a thyristorbased memory in “Design and Electrical Characterization of 2-T ThyristorRAM with Low Power Consumption,” IEEE Electron Device Letters, volume39, issue 3, Jan. 23, 2018.

BRIEF SUMMARY OF THE INVENTION

A multi-layer random access memory array semiconductor structure isdisclosed herein. The structure is formed on a semiconductor substrateand includes multiple layers, with each layer having an x row by ycolumn array of memory cells on that layer. A memory cell in a layerwill have a location M_(xy) meaning it is located in the x row and ycolumn on that layer. We refer to a stack of the memory cells extendingin the z direction perpendicular to the layers as being a “string” ofmemory cells, i.e. a string is a stack of memory cells arranged oneabove another vertically. Thus a string of memory cells will connect onememory cell M_(xy) at a particular location in each layer to the memorycells directly above and directly below it.

In one embodiment in which the memory cells are thyristors, the anodesof thyristors in a string of memory cells are connected together by avertical electrical connection extending through all of the layers. Wordlines for the memory array extend in the x direction and are connectedto rows of these vertical electrical connections. Bit lines are providedin each layer. Each bit line extends in the y direction and is connectedto a column of thyristor cathodes in that layer. Selection of one wordline selects one row of the vertical electrical connections. Selectionof one bit line selects a horizontal column of memory cells in onelayer. Together the word line and bit line selections address onethyristor in one layer. (Of course rows and columns in a single layer ofthe array could also be referred to as columns and rows in that layer.)

In another embodiment, shared bit lines are used in the memory arraymeaning one bit line in a layer is connected to thyristors in two ormore strings. In this embodiment selection of one bit line would resultin accessing more than one memory cell coupled to the same word line. Toavoid this and enable random access, we provide select transistors ateach end of each string of memory cells, i.e. at the top and bottom ofeach vertical anode line. This allows selection among memory cells ifshared by a single bit line.

As mentioned the bit lines in each embodiment extend horizontally in they direction on each layer. In the semiconductor structure, each bit lineextending further away from the array than the bit line on the layerabove it, creating a “staircase” of connections. Additional verticalconnections (in the z direction are made to the bit lines where each bitline extends beyond the bit line in the layer above it. In a preferredembodiment select transistors are vertical gate nmos and pmostransistors in layers above the top layer of the memory array and belowthe bottom layer of the array.

A process for manufacturing the semiconductor structure described aboveincludes steps of depositing alternating layers of insulating materialand first material on a semiconductor substrate, and etching holes ortrenches through the alternating layers. Crystalline silicon is thenselectively grown in the holes or trenches before the first material isetched away from the side exposed by a cut etch, thus forming cavitiesbetween the layers of insulating material.

After removal of the first material, a confined epitaxial lateralovergrowth (CELO) process is used to form crystalline silicon in thecavities. The CELO silicon is in-situ doped during the growth to formthe needed memory cells, e.g. pnpn regions for thyristors. Later,electrical connections are provided to the semiconductor devices bymaking ohmic contacts to the top and side.

Other objects, features, and advantages of the present invention willbecome apparent upon consideration of the following detailed descriptionand the accompanying drawings, in which like reference designationsrepresent like features throughout the figures.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a perspective view of an 8-layer stacked memory array withthyristor memory cells.

FIG. 2 is a cross-sectional view along an anode line of the array shownin FIG. 1.

FIG. 3A is a circuit schematic of a portion of a memory arrayillustrating word lines, bit lines and anode lines of the array.

FIG. 3B is a circuit schematic of a memory array such as in FIG. 3A, butwith shared bit lines, showing top and bottom select transistors foreach string of thyristors.

FIG. 3C is a circuit schematic of a memory array such as in FIG. 3B, butin which each thyristor has an assist gate, and the connections to thoseassist gates.

FIGS. 4-25 illustrate processes for fabricating the memory array shownin FIG. 1, with FIG. 4 illustrating stacked layers of silicon dioxideand silicon nitride.

FIG. 5 illustrates formation of slots 50.

FIGS. 6A and 6B illustrate gate oxide formation.

FIG. 7 illustrates selective epitaxial growth of silicon within theslots 50.

FIG. 8 illustrates staircase patterning and etching steps.

FIGS. 9A and 9B illustrate formation of slots 90 a and 90 b.

FIGS. 10A and 10B illustrate silicon dioxide fill and planarization.

FIGS. 11A and 11B illustrate recess etching of select transistor gateconnections.

FIGS. 12A and 12B illustrate epitaxy block oxidation and removal ofsilicon nitride layers.

FIGS. 13A and 13B illustrate thyristors formed by confined epitaxiallateral overgrowth of silicon.

FIG. 14 illustrates self-aligned formation of metal contacts to thethyristors.

FIG. 15 illustrates silicon dioxide fill and planarization.

FIG. 16 illustrates anisotropic etching of the thyristor stack and oxidefill to isolate thyristor regions.

FIG. 17 illustrates etching of SEG silicon holes down to pmos drainregions.

FIG. 18 illustrates metal deposition and planarization.

FIGS. 19A and 19B illustrate etch back of the connections shown in FIG.18.

FIG. 20 illustrates formation of an nmos select transistor channel andsource/drain regions.

FIGS. 21A and 21B illustrate etching openings for assist gates.

FIG. 22 illustrates conformal deposition and planarization of the assistgates

FIG. 23 illustrates etching openings for electrical contacts to anodesand assist gates.

FIG. 24 illustrates etching openings for electrical contacts tostaircases.

FIG. 25 illustrates formation of first level metal lines.

FIG. 26 is a perspective view of the completed memory array includingsecond layer metal lines.

DETAILED DESCRIPTION OF THE INVENTION

The assignee of this application has previously disclosed thyristorcells used as memory devices in a variety of applications. It isadvantageous, however, to be able to stack the thyristors, as well asother type memory cells, to provide multiple layers of memory cells in amemory array. This increases bit density per unit area and furtherreduces patterning cost. The present application discloses a newmultiple layer dynamic random access memory structure, preferablyemploying thyristors, as well as methods of manufacturing such a memory.

Features of the invention include: an exemplary stacked thyristor cellarray with thyristors selectively formed using confined epitaxiallateral overgrowth (CELO) of single crystalline silicon, or othersemiconductor; stacked access lines having staggered connections toprovide cathode connections; and vertical access lines to contactthyristor anodes. Each lateral thyristor consists of pnpn or npnpin-situ doped during epitaxial growth. Select transistors for addressingcells in the memory array, as well as assist gates to improve thyristorperformance are also provided. Metal plugs replace silicon pillarsreducing string resistance and minority carrier effects.

FIGS. 1-3 illustrate the memory array semiconductor structure andcircuit. FIGS. 4-25 illustrate a preferred process for fabricating thearray.

FIG. 1 is a perspective view of an 8-layer stacked memory array in whichthe memory elements are thyristors. In FIG. 1 the dielectric materialelectrically isolating adjoining regions from each other has beenomitted to reveal only the semiconductor, metal and metal silicideregions. The structure in FIG. 1 is formed using an n-conductivity type(herein n-type) semiconductor substrate 10, with pockets of stronglydoped p+ conductivity type (herein p+-type) regions 40 near the surface.As will be shown more clearly in subsequent figures each memory elementis provided by a pnpn thyristor with an optional assist gate. The figureillustrates a stack of eight layers of memory cells 15, however,commercial implementations of the memory array will have an arbitrarynumber of layers of memory cells, e.g. 64 or more layers. For a stackwith a larger number of layers where bit lines (thyristor cathode lines)are shared in each layer, select transistors (shown in FIG. 2) areprovided at the top and bottom of each string of memory cells to enablethe unique selection of a particular cell and application of appropriatepotentials for read and write operations. See FIGS. 3B and 3C. FIG. 1 isan implementation of the circuit shown in FIG. 3C. If the circuits ofFIG. 3A or 3B are to be implemented, the assist gates and selecttransistors are eliminated as appropriate from the structure.

Vertical metal connections 18 couple the anodes of the memory cells in astring to word lines 21 in the upper portion of the structure. Bit lineconnections 19 to the cathodes of the thyristor memory cells extendlaterally away from the cell array to vertical connections 13 upward tothe surface of the device for connection to bit lines 11. An optionalassist gate is provided for each thyristor and, if included, couples toassist gate lines 14 and 16 as will be shown in FIG. 3C.

In a typical implementation, the structure shown in FIG. 1 is the righthalf portion of a sub-array, with a left half portion of the sub-arraybeing a mirror image of the illustration, extending away from the leftedge of the structure shown in FIG. 1.

In FIG. 1 the memory cells are preferably thyristors, however, those ofskill in the art will appreciate other types of memory devices may alsobe employed. For example, in other embodiments, phase change memorycells, fuses, anti-fuses, resistive elements or other memory cell typescan be employed from the teaching of this invention.

FIG. 2 is a cross-sectional view along a word line 21 of the thyristormemory cell array shown in FIG. 1. FIG. 2 illustrates four stacks 15each of eight thyristors. Each stack of eight thyristors includes a pairof select transistors to enable accessing only one string of thyristorsif a shared bit line architecture is implemented. An nmos selecttransistor 24 is at the top of each string of thyristors and a pmosselect transistor 25 is at the bottom of each string. The arrows tothese transistors point to the channel regions of the transistors. Eachof the select transistors has a vertical gate most easily seen by thethin layer of gate insulating material near the points of the arrows tothe transistor channel regions. The horizontal layers to the right ofthe gate insulating layers provide electrical connections 28 and 29 tothe gates.

The vertical metal contact 18 to the anodes of each string of eightthyristors is shown at the left edge of the figure and extends upward toconnect to the word line 21 when the select transistors 24 and 25 areon. A metal contact 27 connects to each thyristor cathode. The cathodelines 19 are not shown in this cross-section, but extend into and out ofthe plane of the figure, as shown in FIG. 1.

FIGS. 3A, 3B and 3C are circuit schematics of a portion of a memoryarray implemented as shown in FIG. 1 with thyristors 20 as memory cells.FIG. 3A shows the row (x), column (y) and string (z) directions. In FIG.3A only a very small portion of a memory array is shown, one with twoword lines coupled to eight strings of memory cells. In a typicalcommercial implementation there will be billions of memory cells. Eachthyristor 20 comprises a pnpn (or npnp) semiconductor device without anassist gate (FIGS. 3A and 3B) or with an assist gate (FIG. 3C) coupledto one of the thyristor base regions. The anodes of thyristors in onestring of the array are coupled together by an anode line 18. Thecathodes in one row of the array are commonly connected to a bit (orcathode) line 23.

FIG. 3B illustrates an array such as shown in FIG. 3A, but with a commonpmos select transistor line 17 and shared bit lines 19. In thisimplementation, upper select transistors 24 at the top of each columnand lower select transistors 25 at the bottom of each column of a commonanode line are used to enable selection of only one string of the twostrings shared by one bit line coupled to the same word line 21.

FIG. 3C illustrates the addition of assist gates to the thyristor memorycells of FIGS. 3A and 3B and their associated connecting lines. Anassist gate is associated with a base region of each thyristor 20. Theassist gates are connected to a layer assist gate line 14 in the columnline direction of each layer of memory cells. Vertical assist gate linesextend through the array vertically with each vertical line connectedbetween two assist gates. The vertical lines, in turn, are connected torow assist gate lines.

The techniques for operating the thyristor memory arrays illustrated,including reading data from the array, writing data into the array, andrefreshing data stored in the array, are described in commonly assignedU.S. Pat. No. 9,564,199, entitled “Methods of Reading and Writing Datain a Thyristor Random Access Memory,” incorporated by reference herein.

FIG. 4, et seq., illustrate a preferred process for fabricating thestructure shown in FIGS. 1 and 3. FIG. 4 shows the structure afterinitial steps of fabrication. Beginning with a semiconductor wafer 10 ap+ type implant step is performed in the area of the cell array. Theimplanted regions 40 shown in FIG. 1 provide a common electricalconnection to the pmos select transistors at the bottom of each columnof thyristors.

Next a silicon dioxide layer 54 and a polysilicon layer 52 (see FIG. 6B)are deposited. Following that, alternating layers 42 of silicon nitrideand silicon dioxide are deposited. The number of layers depositeddetermines the number of layers of memory devices to be formed, with onelayer of silicon nitride deposited for each layer of memory cells. Afterthe last layer of silicon dioxide, a layer of polysilicon 56 isdeposited. Then another layer of silicon dioxide is deposited, followedby a hard mask layer 44, for example, a metal oxide such as Al₂O₃.

Using conventional photolithography, repeated known etching processesare used to remove the sequential layers of silicon dioxide and siliconnitride to form slots 50 extending through all of the layers down tolayer 54 (shown in FIG. 6B). These slots will partially separate groupsof memory cells from each other. The appearance of the structure afteretching the slots 50 is shown in FIG. 5.

FIGS. 6A and 6B illustrate the next steps in the fabrication process.The exposed polysilicon lines 52 and 56 are recessed by 3 to 6 nm withan isotropic etch and the exposed sidewalls of the slots are thenoxidized. The oxidation of polysilicon forms the gate oxide 65 for thepmos and nmos select transistors on the exposed edges of the polysiliconlayers.

As shown in FIG. 7, after the bottom silicon dioxide is etched away toexpose the underlying single crystal silicon, crystalline silicon 75 isgrown in slots 50. Selective epitaxial growth (SEG) of silicon is awell-known technology, with chemistries such as dichlorosilane and HCloften used. It is desirable to grow the silicon to be planar with thehard mask. Alternatively, SEG silicon can be over grown above the hardmask and then chemical mechanical polishing (CMP) used to remove theexcess silicon above the hard mask. The structure is then coated with athick photoresist, patterned and etched using progressive photoresisttrimming.

For an eight-layer memory array, after 8 “loops” of photoresist trim andoxide/nitride etching, the staircase structure 70 results, as shown inFIG. 8A. Each step (layer) in the “stairs” will connect one node of asub-array of columns of memory cells in that layer to an externalconnection for accessing those memory cells. In the preferred embodimentthe stepped layers enable bit line electrical connections to thethyristor cathodes. The exposed portion of each successively lower stepprovides area for a via type connection from the upper surface of theintegrated circuit to the exposed portion of that step.

Next as shown in FIG. 8, a thick layer of dielectric material 80, e.g.silicon dioxide, is formed over the entire structure and planarized. Ina preferred process the planarization step used here and in subsequentoperations uses chemical mechanical polishing (CMP).

Then as shown in FIG. 9A, further masking and etching steps create slots90 a and 90 b. Slots 90 a are aligned to cut the layer stack along theSEG silicon fence 75. Slots 90 b partially cut the staircase structureorthogonally to slots 90 a. Slots 90 a and 90 b are formed usingwell-known reactive ion etching (RIE) and optionally extend slightlyinto the semiconductor substrate 10 as shown in FIG. 9B.

Next, as shown in FIG. 10A, slots 90 a and 90 b are filled with silicondioxide 100. Then the structure is again planarized with a CMP process.FIG. 10B is a cross-sectional view after planarization.

After masking and lithography another set of slots 110 is etched throughall the layers down to the bottom layer of silicon dioxide, as shown inFIG. 11A. These slots 110 will enable formation of the thyristor orother type memory cells. Note that the mask defining the location ofslots 110 is aligned to leave a vertical layer of silicon dioxide 114 onthe sidewall. This insulating layer 114 prevents a subsequent epitaxialgrowth of silicon process from forming single crystal silicon along thatsidewall. Following this step, as shown in FIG. 11B, exposed edges ofpolysilicon connections 28 and 29 to the gates of the select transistorsare etched back to leave space for self-aligned metal formation. Thisprovides lower resistance select transistor gate connections.

Next, as shown in FIGS. 12A and 12B, a thick oxide of 10 nm to 100 nm isgrown on exposed silicon surface before the multiple layers of siliconnitride are etched away. A wet etchant isotropically removes all exposedsilicon nitride between the layers of silicon dioxide 120, both in thememory cell area (FIG. 12B), and in the staircase area (FIG. 12A). Theopenings 122 between the layers of silicon dioxide 120 after siliconnitride removal in the memory cell area are shown in FIG. 12B. Theremaining silicon dioxide layers are supported along two edges toprovide mechanical structural strength.

Following these processes, confined epitaxial lateral overgrowth ofsilicon is used to form memory cells in the cell area of the array. Theepitaxial growth is selective only to regions with exposed SEG siliconseed crystal. As the process proceeds appropriate conductivity typedopants are introduced into the gas flow to create the desiredconductivity type structure for whatever type memory cells are to beformed in the array. This process forms single crystal silicon in theopenings 122 between the layers 120. In the embodiment with thyristorsmemory cells, the sequential dopants are p+-type, n-type, p-type, andn+-type providing the lateral thyristor anode, bases, and cathode,respectively. FIG. 13B shows the cross sections of the thyristors 125formed in the openings 122 between layers 120.

In an alternate embodiment with thyristor memory cells, instead ofconfined epitaxial lateral overgrowth of silicon being used for all fourof the pnpn regions, silicon is used to form the cathode and anoderegions, and a semiconductor material with narrower energy bandgap(<1.12 eV) is used to the form the p and n conductivity type baseregions. This bandgap engineering is advantageously used to improve thepnpn thyristor switching characteristics, standby stability, disturbtolerance, and temperature operating window. One type of narrowerbandgap semiconductor material is silicon-germanium (Si_(1-x)Ge_(x))where x is the germanium mole fraction. The energy bandgap of Si_(1-x)Ge_(x) can be linearly varied from 1.1 eV to 0.7 eV by increasing Gemole fraction. The silicon-germanium base regions permit the thyristormemory cell to turn on at lower voltages than a similar structure havingsilicon base regions. See, e.g. commonly assigned U.S. patentapplication Ser. No. 15/807,536, filed Nov. 8, 2016, and entitled“Vertical Thyristor Cell and Memory Array with Silicon-Germanium baseRegions.

The n-type and p-type silicon-germanium base regions preferably have aconstant germanium composition of 2-30 percent mole fraction.Alternatively, the germanium composition in the alloy of the two baseregions may vary. The germanium fraction may be linearly graded suchthat germanium mole fraction is low near the middle n-base/p-basejunction and higher towards both the anode and the cathode junctions.The result is that the bandgap is large at the middle junction and andsmaller at the anode and cathode junctions. As a result, band-to-bandtunneling is reduced during the switch-on and standby operations,improving cell stability. On the other hand, the heterojunction at theanode and cathode still increase emitter efficiency and thereforethyristor loop gain. Another variation in the silicon-germaniumcomposition reverses the linear grading so the germanium mole fractionnear the middle junction is high and the germanium mole fraction nearboth the anode and cathode junctions is low, reducing band-to-bandtunneling leakage during the turn-off operation and helping cell turn-onat low temperatures. Pseudomorphic SiGe is typically grown by switchingon germane (GeH4) gas in addition to silicon precursors such as SiH₄ orSiH2Cl2 and dopant gases such as diborane (B₂H₆), phosphine (PH₃), orarsine (AsH₃).

A metal contact formation process then provides electrical connections140 to the thyristor cathodes and connections to the select transistorgates 144, as shown in FIG. 14. In this process a transition metal, e.g.cobalt, titanium, or nickel, is deposited and annealed to form metalsilicide contacts to the thyristors. Next a conductive metal layer, e.g.tungsten, is conformally deposited, and then isotropically etched backto provide low resistance contacts to the metal silicide. The processforms not only the direct connections to the thyristors 125, but alsothe connections 19 extending laterally away from the thyristors tocreate the staircase of cathode connections shown in FIG. 1.

As shown by FIG. 15, the structure is then filled with silicon dioxideand planarized by a CMP process. A new mask and further etchingprocesses separate the thyristor regions into separate memory cells asindicated by a comparison of FIG. 16 with FIG. 15. After that, thestructure is again filled with dielectric material and planarized.

Next as shown in the cross section of FIG. 17, a silicon etch is used toremove the SEG silicon adjoining the anodes of the thyristors, formingslots 160. Note that the slots 160 do not extend all the way down to thesubstrate, but stop short of the pmos select transistors near thebottoms of the slots. Then a metal contact process like that describedabove is used to form metal silicide connections 170 to the thyristoranodes in each stack as shown in FIG. 18. The structure is againplanarized, e.g. using a CMP process.

Next the electrical connections 170 previously formed are etched back,thus recessing the silicide and metal connections and providing spacefor the select transistor to be formed at the top of that string. Therecesses are shown as small holes 190 in FIG. 19A, and as recessedregions 190 in the cross section of FIG. 19B.

Following this step, selective epitaxial growth 200 with n+, p andn-type dopants is used to form the source, channel and drain regions ofthe nmos select transistor at the top of each string of memory cells.This completes the formation of the memory array structure. Well-knownfurther processing as described provides electrical connections to thedesired regions of the memory array. See the discussion below withrespect to FIG. 23-25.

In implementations of the three-dimensional memory array when thyristorsare used as memory cells, it may be desirable to also provide an assistgate for at least one of the base regions of each thyristor. Amodification of the process described above provides such assist gates.This process is shown in FIGS. 21 and 22.

This process uses the same steps described above up through FIG. 16.After the thyristors are divided, a new mask defines the locations forwhere the assist gates will be formed. As shown in FIGS. 21A and 21B,holes 210 are then etched through all of the layers. A thin layer ofgate oxide is then grown on the sides of the holes to isolate the assistgates from the thyristors. Next atomic layer deposition of a titaniumnitride barrier is performed, followed by a conformal deposition oftungsten. The tungsten provides the assist gate for each thyristor. ACMP process is then used to planarize the upper layer of the structure.FIG. 22 is a cross section of the structure along the assist gate line.

FIGS. 23-25 illustrate the final processes used to provide electricalconnections to the memory array. As shown in FIG. 23 dielectric materialis deposited and another CMP process prepares it for anode 230 andassist gate 234 connections, shown as small openings on the uppersurface of the illustration. Next further masking and etching steps areperformed to provide electrical connections to the staircase of cathodeconnections. These openings 240 are shown in FIG. 24.

FIG. 25 illustrates the next aspect of the process in which first layermetal electrical connections to the memory cells are provided. In FIG.25, with thyristor memory cells, connections 252 are formed usingwell-known technology to electrically connect to the anodes of thememory cells. Connections 254 connect to the cathodes and assist gatesof the thyristors.

FIG. 26 is a perspective view illustrating the completed structure afterformation of second layer metal connections. In FIG. 26 portions of thestructure have been “cut away” to show various regions within thethyristor based structure. The regions include substrate 10, verticalanode connections 18, word (anode) lines 12, staircase cathodeconnections 19, vertical connections 13 to the cathode lines 19,thyristors 20, pmos select transistor 24, and nmos select transistor 25.

This description of the invention has been presented for the purposes ofillustration and description. It is not intended to be exhaustive or tolimit the invention to the precise form described, and manymodifications and variations are possible in light of the teachingabove. The embodiments were chosen and described in order to bestexplain the principles of the invention and its practical applications.This description will enable others skilled in the art to best utilizeand practice the invention in various embodiments and with variousmodifications as are suited to a particular use. The scope of theinvention is defined by the following claims.

The invention claimed is:
 1. A multi-layer random access memory arraystructure comprising: a semiconductor substrate; z layers of thyristormemory cells, each memory cell having semiconductor material with anarrower energy bandgap than silicon used to the form the thyristor baseregions, each of the z layers including an array of x by y thyristormemory cells electrically isolated from each other; a string ofthyristor memory cells, the string including one memory cell from eachof the z layers in the array; a first electrical connection extendingthrough the array connected to a first terminal of each thyristor memorycell in the string of memory cells; a plurality of second electricalconnections, one second electrical connection in each layer beingconnected to a second terminal of the one thyristor memory cell in thatlayer of memory cells; the second electrical connection in each layerextending laterally outward further than the second electricalconnection in the layer above it; and a plurality of third electricalconnections, each third electrical connection extending vertically toconnect to a different one of the plurality of second electricalconnections.
 2. A multi-layer memory array as in claim 1 wherein: thefirst terminal comprises one of the anode and cathode of a thyristor;and the second terminal comprises the other of the anode and cathode ofthe thyristor.
 3. A multi-layer memory array as in claim 2 wherein: thethyristors comprise lateral thyristors having silicon-germanium baseregions; and each of the z layers is isolated from a layer above it anda layer below it by an intervening layer of insulating material.
 4. Amulti-layer memory array as in claim 1 further comprising a plurality offourth electrical connections, each fourth electrical connectionconnecting a plurality of strings of memory cells together.
 5. Amulti-layer memory array as in claim 4 further comprising: a firstselect transistor connected to one end of each first electricalconnection; and a second select transistor connected to an opposite endof each first electrical connection; and wherein activation of both thefirst and second select transistors selects only one string of memorycells from the plurality of strings.
 6. A multi-layer memory array as inclaim 5 wherein: the first select transistor is disposed in a layerabove a top layer of the z layers; and the second select transistor isdisposed in a layer below a bottom layer of the z layers.
 7. Amulti-layer memory array as in claim 6 wherein: the first selecttransistor has a first terminal connected to one of the first electricalconnections, a second terminal connected to one of the fourth electricalconnections, and a first control terminal; the second select transistorhas a first terminal connected to the one of the first electricalconnections, a second terminal connected to a region in thesemiconductor substrate, and a second control terminal; and wherein inresponse to control signals applied to the first and second controlterminals, a string of memory cells is connected to the fourthelectrical connection.
 8. A multi-layer memory array as in claim 7wherein: the fourth electrical connections provide word lines in thememory array; and the second electrical connections provide bit lines inthe memory array.
 9. A multi-layer memory array as in claim 8 wherein:each bit line in the array is coupled to two strings of memory cells;and the control signals select only one of the two strings of memorycells to be connected to a word line.
 10. A multi-layer memory array asin claim 1 wherein each thyristor memory cell includes an assist gate.11. A multi-layer memory array as in claim 10 further comprising a threedimensional network of assist gate electrical connections extendingthrough the multi-layer memory array enabling connection of the assistgate of each thyristor to an upper surface of the memory array.
 12. Amulti-layer memory array as in claim 11 wherein: on each of the z layersthe assist gate electrical connections are interleaved with the secondelectrical connections; and the assist gate electrical connections areinterleaved with the fourth electrical connections.
 13. A multi-layerthyristor memory array structure comprising: a semiconductor substrate;z layers of thyristors having base regions formed from semiconductormaterial with a narrower energy bandgap than silicon, each of the zlayers including an array of x rows by y columns of thyristors; a firstset of electrical connections connecting strings of thyristors, eachstring including one thyristor from each of the z layers in the arrayconnected together; an array of x by y first electrical connectionsconnecting a first terminal of each thyristor in each string to thethyristors above it and the thyristor below it in that string; a firstset of word line connections extending in parallel to connect rows ofthe strings together; and a first set of bit line connections extendingin parallel on each layer to connect together columns of thyristors oneach layer, the first set of bit line connections on each layerextending outward on each layer away from the array further than thesecond set of electrical connections on the layer immediately above it.14. A multi-layer thyristor memory array structure as in claim 13further comprising a second set of bit line connections extendingvertically from an upper layer of the memory array downward to connectto each of the first set of bit line connections.
 15. A multi-layerthyristor memory array structure as in claim 13 wherein: the word linesconnect to one of the thyristor anodes and cathodes; and the bit linesconnect to the other of the thyristor anodes and cathodes.
 16. Amulti-layer thyristor memory array structure as in claim 13 wherein: thethyristors comprise lateral thyristors; and the base regions of thethyristors include silicon-germanium.
 17. A semiconductor fabricationprocess comprising: depositing alternating layers of insulating materialand first material on a semiconductor substrate; etching trenchesthrough the alternating layers; removing the first material by laterallyetching it from between the layers of insulating material to formcavities between the layers of insulating material; beginning a processof forming silicon thyristors in the cavities; introducing a siliconcontaining gas and first conductivity type impurity into the process tothereby form one of a cathode or an anode for the thyristors;introducing silicon-germanium into the process, together with oppositeconductivity type impurity to thereby form a first base region for thethyristors; introducing silicon-germanium into the process, togetherwith first conductivity type impurity to thereby form a second baseregion for the thyristors; introducing a silicon containing gas andopposite conductivity type impurity into the process to thereby form theother of a cathode or an anode for the thyristors; and providingelectrical connections to the semiconductor devices.
 18. A semiconductorfabrication process as in claim 17 wherein the step of etching trenchesfurther comprises: etching first trenches in a first direction; formingsingle crystal semiconductor material on walls of the first trenches;etching pairs of the alternating layers of insulating material and firstmaterial to form a staircase structure; etching second trenches in asecond direction orthogonal to the first direction; and then removingthe first material by laterally etching it.
 19. A semiconductorfabrication process as in claim 18 wherein the single crystalsemiconductor material provides a substrate for formation of singlecrystal semiconductor material in the cavities.
 20. A process as inclaim 17 wherein the n-type and p-type silicon-germanium base regionspreferably have a constant germanium composition of 2-30 percent molefraction.
 21. A process as in claim 17 wherein germanium composition inthe base regions varies across the base regions.
 22. A process as inclaim 21 wherein the germanium composition is graded such that germaniummole fraction is lower near an n-base/p-base junction and higher towardsboth anode and the cathode junctions.
 23. A process as in claim 21wherein the germanium composition is graded such that germanium molefraction is higher near an n-base/p-base junction and higher towardsboth anode and the cathode junctions.